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| Datasheet File OCR Text: |
| NTE3091 Optoisolator SCR Output Description: The NTE3091 is a gallium arsenide, infrared emitting diode coupled with a light activated silicon controlled rectifier in a 6-Lead DIP type ppackage. Absolute Maximum Rating: (TA = +25C unless otherwise specified) Infrared Emitting Diode Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Forward Current Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Peak (Pulse Width = 1s PPs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A LED Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.33mW/C Photo-SCR Peak Forward Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V RMS Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mA Peak Forward Current (Pulse Width = 100s, Duty Cycle = 1%) . . . . . . . . . . . . . . . . . . . . . . . . . . 10A Surge Current (10ms) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5A Reverse Gate Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Power Dissipation (TA = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.3mW/C Power Dissipation (TC = +25C) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000mW Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.3mW/C Total Device Isolation Surge Voltage (Input-to-Output) Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3535V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2500V Steady-State Isolation Voltage (Input-to-Output) Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2100V RMS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Operating Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +100C Storage Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Lead Temperature (During Soldering, 10sec) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +260C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter Infrared Emitting Diode Forward Voltage Reverse Leakage Current Capacitance VF IR CJ IF = 10mA VR = 3V V = 0, f = 1MHz - - - 1.2 - 50 1.5 10 - V A pF Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter Photo-SCR Off-State Voltage Reverse Voltage On-State Voltage Off-State Current Reverse Current Capacitance (Anode-Gate) Coupled Input Current to Trigger VAK = 50V, RGK = 10k VAK = 100V, RGK = 27k Isolation Resistance Input-to-Output Capacitance Coupled dv/dt, Input-to-Output Input-to-Output Voltage = 500VDC Input-to-Output Voltage = 0, f = 1MHz - - 100 - 500 - - - - - 20 11 - 2 - mA mA G pF V/s VDM VRM VTM IDM IRM ITM = 0.3A VDM = 400V, RGK = 10k, TA = +100C VRM = 400V, RGK = 10k, TA = +100C V = 0, f = 1MHz (Gate-Cathode) ID = 150A, RGK = 10k, TA = +100C 400 400 - - - - - - 1.1 - 20 350 - - 1.3 150 - - V V V mA mA pF Symbol Test Conditions Min Typ Max Unit Pin Connection Diagram Anode Cathode N.C. 1 2 3 6 Gate 5 Anode 4 Cathode 6 1 5 2 4 3 .260 (6.6) Max .070 (1.78) Max .350 (8.89) Max .200 (5.08) Max .350 (8.89) Max .300 (7.62) .085 (2.16) Max .100 (2.54) |
Price & Availability of NTE3091
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